Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires.
The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (...
| Main Authors: | , , , , , , |
|---|---|
| Formato: | Journal article |
| Idioma: | English |
| Publicado: |
2012
|