Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires.
The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (...
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Bibliographic Details
| Main Authors: |
Parkinson, P,
Dodson, C,
Joyce, H,
Bertness, K,
Sanford, N,
Herz, L,
Johnston, M |
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| Format: | Journal article
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| Language: | English |
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| Published: |
2012
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