Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by metal-organic chemical vapor deposition. By deposition of thin GaAs buffer layers on Si substrates, these nanowires could be grown on the buffer layers with much less stringent conditions as otherwise...
Autors principals: | Kang, J, Gao, Q, Joyce, H, Tan, H, Jagadish, C, Kim, Y, Guo, Y, Xu, H, Zou, J, Fickenscher, M, Smith, L, Jackson, H, Yarrison-Rice, J |
---|---|
Format: | Journal article |
Idioma: | English |
Publicat: |
2011
|
Ítems similars
-
Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires
per: Titova, L, et al.
Publicat: (2006) -
Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
per: Perera, S, et al.
Publicat: (2008) -
Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires.
per: Hoang, T, et al.
Publicat: (2007) -
Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires
per: Smith, L, et al.
Publicat: (2007) -
Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
per: Kang, J, et al.
Publicat: (2010)