Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by metal-organic chemical vapor deposition. By deposition of thin GaAs buffer layers on Si substrates, these nanowires could be grown on the buffer layers with much less stringent conditions as otherwise...
Hlavní autoři: | Kang, J, Gao, Q, Joyce, H, Tan, H, Jagadish, C, Kim, Y, Guo, Y, Xu, H, Zou, J, Fickenscher, M, Smith, L, Jackson, H, Yarrison-Rice, J |
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Médium: | Journal article |
Jazyk: | English |
Vydáno: |
2011
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