Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates

We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by metal-organic chemical vapor deposition. By deposition of thin GaAs buffer layers on Si substrates, these nanowires could be grown on the buffer layers with much less stringent conditions as otherwise...

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Hlavní autoři: Kang, J, Gao, Q, Joyce, H, Tan, H, Jagadish, C, Kim, Y, Guo, Y, Xu, H, Zou, J, Fickenscher, M, Smith, L, Jackson, H, Yarrison-Rice, J
Médium: Journal article
Jazyk:English
Vydáno: 2011