TIME-RESOLVED EXCITON PHOTOLUMINESCENCE IN GaSe AND GaTe.
Time-resolved photoluminescence measurements of the layered semiconductors GaSe and GaTe have been made using a mode-locked dye laser and a synchronously scanning streak camera. It is shown that at low excitation densities (10**1**5-10**1**7 cm** minus **3) exciton dynamics is dominated by trapping...
| Váldodahkkit: | , |
|---|---|
| Materiálatiipa: | Journal article |
| Giella: | English |
| Almmustuhtton: |
1987
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