Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics
We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable for optoelectronic device applications. Growth temperature and precursor flows have a significant effect on the morphology, crystallographic quality, intrinsic doping and optical properties of the resul...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Journal article |
| Published: |
2008
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