Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing
Glavni autori: | Liu, X, Lu, W, Chen, X, Shen, S, Tan, H, Yuan, S, Jagadish, C, Johnston, M, Dao, L, Gal, M, Zou, J, Cockayne, D |
---|---|
Format: | Journal article |
Izdano: |
2000
|
Slični predmeti
-
V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing
od: Kim, Y, i dr.
Izdano: (1996) -
Carrier transfer between V-grooved quantum wire and vertical quantum well
od: Lu, W, i dr.
Izdano: (2001) -
Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires
od: Zhao, Q, i dr.
Izdano: (2000) -
Influence on GaAs/AlGaAs quantum well infrared photodetector of proton implantation and rapid thermal annealing
od: Li, N, i dr.
Izdano: (2000) -
Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wires modified by selective implantation and annealing
od: Liu, X, i dr.
Izdano: (1999)