Towards cavity quantum electrodynamics and coherent control with single InGaN/GaN quantum dots

Towards cavity quantum electrodynamics and coherent control with single InGaN/GaN quantum dots

<p>Experimental investigations of the optical properties of InGaN/GaN quantum dots are presented. A pulsed laser is used to perform time-integrated and time-resolved microphotoluminescence, photoluminescence excitation, and polarisation-resolved spectroscopy of single InGaN quantum dots under...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awdur:	Reid, BPL
Awduron Eraill:	Taylor, R
Fformat:	Traethawd Ymchwil
Iaith:	English
Cyhoeddwyd:	2013
Pynciau:	Condensed Matter Physics Physics

Eitemau Tebyg

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot
gan: Jarjour, A, et al.
Cyhoeddwyd: (2007)

Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
gan: Na, J, et al.
Cyhoeddwyd: (2006)

Time-integrated and time-resolved optical studies of InGaN quantum dots
gan: Robinson, J, et al.
Cyhoeddwyd: (2005)

Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field
gan: Robinson, J, et al.
Cyhoeddwyd: (2005)

Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy
gan: Na, J, et al.
Cyhoeddwyd: (2005)

Strain Effects on the Band Structures of Monolayer GaN from the Density Functional Theory
gan: Hidayati, Sri, et al.
Cyhoeddwyd: (2022)

Optical spectroscopy of a single GaAs quantum ring
gan: Kim, H
Cyhoeddwyd: (2014)

Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers
gan: Teo, Y. C., et al.
Cyhoeddwyd: (2013)

Luminescence properties of isolated InGaN/GaN quantum dots
gan: Martin, R, et al.
Cyhoeddwyd: (2005)

Source data for "Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot"
gan: Kocher, C, et al.
Cyhoeddwyd: (2017)

Electrically driven single InGaN/GaN quantum dot emission
gan: Jarjour, A, et al.
Cyhoeddwyd: (2008)

Progress in the optical studies of single InGaN/GaN quantum dots
gan: Jarjour, A, et al.
Cyhoeddwyd: (2007)

Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD
gan: Sivanathan, P.C., et al.
Cyhoeddwyd: (2018)

Two-photon absorption from single InGaN/GaN quantum dots
gan: Jarjour, A, et al.
Cyhoeddwyd: (2006)

Registration of single quantum dots using cryogenic laser photolithography
gan: Lee, K, et al.
Cyhoeddwyd: (2006)

Cavity-enhanced blue single-photon emission from a single InGaN/GaN quantum dot
gan: Jarjour, A, et al.
Cyhoeddwyd: (2007)

Materials and processing issues in vertical GaN power electronics
gan: Hu, Jie, et al.
Cyhoeddwyd: (2019)

A hole modulator for InGaN/GaN light-emitting diodes
gan: Zhang, Zi-Hui, et al.
Cyhoeddwyd: (2015)

Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot.
gan: Collins, D, et al.
Cyhoeddwyd: (2009)

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot.
gan: Jarjour, A, et al.
Cyhoeddwyd: (2007)

Optical studies of non-linear absorption in single InGaN/GaN quantum dots
gan: Jarjour, A, et al.
Cyhoeddwyd: (2007)

Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays
gan: Taylor, R, et al.
Cyhoeddwyd: (2005)

Two-photon absorption in single site-controlled InGaN/GaN quantum dots
gan: Jarjour, A, et al.
Cyhoeddwyd: (2005)

Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays
gan: Edwards, P, et al.
Cyhoeddwyd: (2004)

Carrier localization mechanisms in InGaN/GaN quantum wells
gan: Watson-Parris, D, et al.
Cyhoeddwyd: (2011)

Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.
gan: Park, Y, et al.
Cyhoeddwyd: (2010)

Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells
gan: Wei Liu, et al.
Cyhoeddwyd: (2022-02-01)

Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots
gan: Kanta Patra, S, et al.
Cyhoeddwyd: (2017)

Optical properties of single photon emitters with GaN, SiC, and perovskites quantum dots
gan: Wang, Ziyu
Cyhoeddwyd: (2021)

Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers
gan: Park, Y, et al.
Cyhoeddwyd: (2011)

Oscillations in Absorption from InGaN/GaN Quantum Well to Continuum
gan: Marta Gładysiewicz-Kudrawiec, et al.
Cyhoeddwyd: (2025-01-01)

Dynamics of single InGaN quantum dots
gan: Taylor, R, et al.
Cyhoeddwyd: (2004)

InGaN quantum dots for micro-LEDs
gan: Lai Wang, et al.
Cyhoeddwyd: (2024-10-01)

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
gan: Oliver, R, et al.
Cyhoeddwyd: (2003)

InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC
gan: Bosch, Julien, et al.
Cyhoeddwyd: (2023)

Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks.
gan: Park, Y, et al.
Cyhoeddwyd: (2012)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
gan: Wang Yongjin, et al.
Cyhoeddwyd: (2011-01-01)

Two-channel Kondo phases in coupled quantum dots
gan: Mitchell, A
Cyhoeddwyd: (2009)

Optical studies of quantum dot-like emission from localisation centres in InGaN/GaN nanorod array LEDs
gan: Chan, C, et al.
Cyhoeddwyd: (2012)

Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED
gan: Mahat, Mohamad Raqif, et al.
Cyhoeddwyd: (2020)