Towards cavity quantum electrodynamics and coherent control with single InGaN/GaN quantum dots

Towards cavity quantum electrodynamics and coherent control with single InGaN/GaN quantum dots

<p>Experimental investigations of the optical properties of InGaN/GaN quantum dots are presented. A pulsed laser is used to perform time-integrated and time-resolved microphotoluminescence, photoluminescence excitation, and polarisation-resolved spectroscopy of single InGaN quantum dots under...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखक:	Reid, BPL
अन्य लेखक:	Taylor, R
स्वरूप:	थीसिस
भाषा:	English
प्रकाशित:	2013
विषय:	Condensed Matter Physics Physics

समान संसाधन

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot
द्वारा: Jarjour, A, और अन्य
प्रकाशित: (2007)

Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
द्वारा: Na, J, और अन्य
प्रकाशित: (2006)

Time-integrated and time-resolved optical studies of InGaN quantum dots
द्वारा: Robinson, J, और अन्य
प्रकाशित: (2005)

Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field
द्वारा: Robinson, J, और अन्य
प्रकाशित: (2005)

Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy
द्वारा: Na, J, और अन्य
प्रकाशित: (2005)

Strain Effects on the Band Structures of Monolayer GaN from the Density Functional Theory
द्वारा: Hidayati, Sri, और अन्य
प्रकाशित: (2022)

Optical spectroscopy of a single GaAs quantum ring
द्वारा: Kim, H
प्रकाशित: (2014)

Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers
द्वारा: Teo, Y. C., और अन्य
प्रकाशित: (2013)

Luminescence properties of isolated InGaN/GaN quantum dots
द्वारा: Martin, R, और अन्य
प्रकाशित: (2005)

Source data for "Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot"
द्वारा: Kocher, C, और अन्य
प्रकाशित: (2017)

Electrically driven single InGaN/GaN quantum dot emission
द्वारा: Jarjour, A, और अन्य
प्रकाशित: (2008)

Progress in the optical studies of single InGaN/GaN quantum dots
द्वारा: Jarjour, A, और अन्य
प्रकाशित: (2007)

Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD
द्वारा: Sivanathan, P.C., और अन्य
प्रकाशित: (2018)

Two-photon absorption from single InGaN/GaN quantum dots
द्वारा: Jarjour, A, और अन्य
प्रकाशित: (2006)

Registration of single quantum dots using cryogenic laser photolithography
द्वारा: Lee, K, और अन्य
प्रकाशित: (2006)

Cavity-enhanced blue single-photon emission from a single InGaN/GaN quantum dot
द्वारा: Jarjour, A, और अन्य
प्रकाशित: (2007)

Materials and processing issues in vertical GaN power electronics
द्वारा: Hu, Jie, और अन्य
प्रकाशित: (2019)

A hole modulator for InGaN/GaN light-emitting diodes
द्वारा: Zhang, Zi-Hui, और अन्य
प्रकाशित: (2015)

Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot.
द्वारा: Collins, D, और अन्य
प्रकाशित: (2009)

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot.
द्वारा: Jarjour, A, और अन्य
प्रकाशित: (2007)

Optical studies of non-linear absorption in single InGaN/GaN quantum dots
द्वारा: Jarjour, A, और अन्य
प्रकाशित: (2007)

Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays
द्वारा: Taylor, R, और अन्य
प्रकाशित: (2005)

Two-photon absorption in single site-controlled InGaN/GaN quantum dots
द्वारा: Jarjour, A, और अन्य
प्रकाशित: (2005)

Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays
द्वारा: Edwards, P, और अन्य
प्रकाशित: (2004)

Carrier localization mechanisms in InGaN/GaN quantum wells
द्वारा: Watson-Parris, D, और अन्य
प्रकाशित: (2011)

Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.
द्वारा: Park, Y, और अन्य
प्रकाशित: (2010)

Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells
द्वारा: Wei Liu, और अन्य
प्रकाशित: (2022-02-01)

Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots
द्वारा: Kanta Patra, S, और अन्य
प्रकाशित: (2017)

Optical properties of single photon emitters with GaN, SiC, and perovskites quantum dots
द्वारा: Wang, Ziyu
प्रकाशित: (2021)

Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers
द्वारा: Park, Y, और अन्य
प्रकाशित: (2011)

Oscillations in Absorption from InGaN/GaN Quantum Well to Continuum
द्वारा: Marta Gładysiewicz-Kudrawiec, और अन्य
प्रकाशित: (2025-01-01)

Dynamics of single InGaN quantum dots
द्वारा: Taylor, R, और अन्य
प्रकाशित: (2004)

InGaN quantum dots for micro-LEDs
द्वारा: Lai Wang, और अन्य
प्रकाशित: (2024-10-01)

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
द्वारा: Oliver, R, और अन्य
प्रकाशित: (2003)

InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC
द्वारा: Bosch, Julien, और अन्य
प्रकाशित: (2023)

Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks.
द्वारा: Park, Y, और अन्य
प्रकाशित: (2012)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
द्वारा: Wang Yongjin, और अन्य
प्रकाशित: (2011-01-01)

Two-channel Kondo phases in coupled quantum dots
द्वारा: Mitchell, A
प्रकाशित: (2009)

Optical studies of quantum dot-like emission from localisation centres in InGaN/GaN nanorod array LEDs
द्वारा: Chan, C, और अन्य
प्रकाशित: (2012)

Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED
द्वारा: Mahat, Mohamad Raqif, और अन्य
प्रकाशित: (2020)