Nanoelectromechanical switch with low voltage drive

Nanoelectromechanical switch with low voltage drive

The triode structure vertical carbon nanotube based nanoelectromechanical switch shows excellent low voltage drive (∼4.5 V), owing to its vertical gate and the narrow gap between structural elements. The insulator deposition and the selective etching process steps simplify fabrication through self-a...

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Detalhes bibliográficos
Principais autores: Jang, J, Cha, S, Choi, Y, Butler, T, Kang, D, Hasko, D, Jung, J, Jin, Y, Kim, J, Amaratunga, G
Formato: Journal article
Idioma:English
Publicado em: 2008
Descrição
Resumo:The triode structure vertical carbon nanotube based nanoelectromechanical switch shows excellent low voltage drive (∼4.5 V), owing to its vertical gate and the narrow gap between structural elements. The insulator deposition and the selective etching process steps simplify fabrication through self-alignment. The thickness of the insulator determines the width of the gap and the etching process, used to produce the vertical gate, removes the need for a complicated lithography step. The low drive voltage increases device stability and reliability and allows the device to be deployed in a wide range of applications. © 2008 American Institute of Physics.

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