Nanoelectromechanical switch with low voltage drive
The triode structure vertical carbon nanotube based nanoelectromechanical switch shows excellent low voltage drive (∼4.5 V), owing to its vertical gate and the narrow gap between structural elements. The insulator deposition and the selective etching process steps simplify fabrication through self-a...
Main Authors: | Jang, J, Cha, S, Choi, Y, Butler, T, Kang, D, Hasko, D, Jung, J, Jin, Y, Kim, J, Amaratunga, G |
---|---|
פורמט: | Journal article |
שפה: | English |
יצא לאור: |
2008
|
פריטים דומים
-
Nanoscale memory cell based on a nanoelectromechanical switched capacitor.
מאת: Jang, J, et al.
יצא לאור: (2008) -
Dynamic Slingshot Operation for Low-Operation- Voltage Nanoelectromechanical (NEM) Memory Switches
מאת: Min Hee Kang, et al.
יצא לאור: (2020-01-01) -
Switch on, switch off: stiction in nanoelectromechanical switches
מאת: Wagner, T, et al.
יצא לאור: (2013) -
Nanoelectromechanical Switches for Low-Power Digital Computing
מאת: Alexis Peschot, et al.
יצא לאור: (2015-08-01) -
A nanogripper employing aligned multiwall carbon nanotubes
מאת: Jang, J, et al.
יצא לאור: (2008)