High electron mobility and insights into temperature-dependent scattering mechanisms in InAsSb nanowires

InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using bo...

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Bibliografske podrobnosti
Main Authors: Boland, JL, Amaduzzi, F, Sterzl, S, Potts, H, Herz, LM, Morral, A, Johnston, MB
Format: Journal article
Izdano: American Chemical Society 2018