High electron mobility and insights into temperature-dependent scattering mechanisms in InAsSb nanowires
InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using bo...
| المؤلفون الرئيسيون: | , , , , , , |
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| التنسيق: | Journal article |
| منشور في: |
American Chemical Society
2018
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