Competing growth mechanisms of Ge/Si(001) coherent clusters

Competing growth mechanisms of Ge/Si(001) coherent clusters

Manylion Llyfryddiaeth
Prif Awduron:	Goldfarb, I, Hayden, P, Owen, J, Briggs, G
Fformat:	Journal article
Cyhoeddwyd:	1997

Eitemau Tebyg

Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
gan: Goldfarb, I, et al.
Cyhoeddwyd: (1999)

Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
gan: Goldfarb, I, et al.
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Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
gan: Goldfarb, I, et al.
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Nucleation of ''hut'' pits and clusters during gas-source molecular-beam epitaxy of Ge/Si(001) in in situ scanning tunnelng microscopy
gan: Goldfarb, I, et al.
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Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
gan: Owen, J, et al.
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Nucleation and growth of CoSi2 dots on Si(001)
gan: Goldfarb, I, et al.
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Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms
gan: Owen, J, et al.
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Using growth kinetics for nanoengineering of Si-Ge surfaces
gan: Goldfarb, I, et al.
Cyhoeddwyd: (1998)

[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
gan: Liao, X, et al.
Cyhoeddwyd: (2004)

Reactive deposition epitaxy of CoSi2 nanostructures on Si(001): Nucleation and growth and evolution of dots during anneal
gan: Goldfarb, I, et al.
Cyhoeddwyd: (1999)

In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001)
gan: Goldfarb, I, et al.
Cyhoeddwyd: (1998)

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
gan: Jian-Huan Wang, et al.
Cyhoeddwyd: (2021-03-01)

Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
gan: Wedler, G, et al.
Cyhoeddwyd: (1998)

Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
gan: Liao, X, et al.
Cyhoeddwyd: (2001)

Finite element analysis of CoSi2 nanocrystals on Si(001)
gan: Goldfarb, I, et al.
Cyhoeddwyd: (2002)

Hydrogen diffusion on Si(001)
gan: Owen, J, et al.
Cyhoeddwyd: (1996)

First principles study of GeSi exchange mechanisms at the Si(001) surface
gan: Zipoli, F, et al.
Cyhoeddwyd: (2008)

Diffusion of paired hydrogen on Si(001)
gan: Bowler, DR, et al.
Cyhoeddwyd: (1998)

Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
gan: Zou, J, et al.
Cyhoeddwyd: (2002)

Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
gan: Liao, X, et al.
Cyhoeddwyd: (2002)

Stress and relief of misfit strain of Ge/Si(001)
gan: Wedler, G, et al.
Cyhoeddwyd: (1998)

Nonuniform alloying in Ge(Si)/Si(001) quantum dots
gan: Lang, C, et al.
Cyhoeddwyd: (2003)

Annealing effects on the microstructure of Ge/Si(001) quantum dots
gan: Liao, X, et al.
Cyhoeddwyd: (2001)

Atomically perfect bismuth lines on Si(001)
gan: Miki, K, et al.
Cyhoeddwyd: (1999)

Bismuth-induced structures on Si(001) surfaces
gan: Miki, K, et al.
Cyhoeddwyd: (1999)

Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
gan: Aleksei V. Kolesnikov, et al.
Cyhoeddwyd: (2015-03-01)

Ordered GeSi nanorings grown on patterned Si (001) substrates
gan: Ma Yingjie, et al.
Cyhoeddwyd: (2011-01-01)

Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
gan: Bergamaschini R, et al.
Cyhoeddwyd: (2010-01-01)

Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor
gan: Ewa Dumiszewska, et al.
Cyhoeddwyd: (2022-06-01)

Alloyed Ge(Si)/Si(001) islands: The composition profile and the shape transformation
gan: Lang, C, et al.
Cyhoeddwyd: (2005)

The non-uniform composition profile in Ge(Si)/Si(001) quantum dots
gan: Lang, C, et al.
Cyhoeddwyd: (2004)

Band-offset determination and excitons in SiGe/Si(001) quantum wells
gan: Cheng, H, et al.
Cyhoeddwyd: (2000)

Strain relaxation by alloying effects in Ge islands grown on Si(001)
gan: Liao, X, et al.
Cyhoeddwyd: (1999)

An experimental-theoretical study of the behaviour of hydrogen on the Si(001) surface
gan: Bowler, DR, et al.
Cyhoeddwyd: (2000)

Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures
gan: Walz, J, et al.
Cyhoeddwyd: (1999)

Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition
gan: Max Franck, et al.
Cyhoeddwyd: (2022-09-01)

Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD
gan: Yong Du, et al.
Cyhoeddwyd: (2021-04-01)

Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si
gan: Max Franck, et al.
Cyhoeddwyd: (2025-01-01)

Enhancing the Coherent Phonon Transport in SiGe Nanowires with Dense Si/Ge Interfaces
gan: Yajuan Cheng, et al.
Cyhoeddwyd: (2022-12-01)

Hydrocarbon adsorption on Si(001): When does the Si dimer bond break?
gan: Fisher, A, et al.
Cyhoeddwyd: (1997)