Competing growth mechanisms of Ge/Si(001) coherent clusters

Competing growth mechanisms of Ge/Si(001) coherent clusters

Bibliografiske detaljer
Main Authors:	Goldfarb, I, Hayden, P, Owen, J, Briggs, G
Format:	Journal article
Udgivet:	1997

Lignende værker

Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
af: Goldfarb, I, et al.
Udgivet: (1999)

Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
af: Goldfarb, I, et al.
Udgivet: (1997)

Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
af: Goldfarb, I, et al.
Udgivet: (1997)

Nucleation of ''hut'' pits and clusters during gas-source molecular-beam epitaxy of Ge/Si(001) in in situ scanning tunnelng microscopy
af: Goldfarb, I, et al.
Udgivet: (1997)

Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
af: Owen, J, et al.
Udgivet: (1997)

Nucleation and growth of CoSi2 dots on Si(001)
af: Goldfarb, I, et al.
Udgivet: (1999)

Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms
af: Owen, J, et al.
Udgivet: (1997)

Using growth kinetics for nanoengineering of Si-Ge surfaces
af: Goldfarb, I, et al.
Udgivet: (1998)

[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
af: Liao, X, et al.
Udgivet: (2004)

Reactive deposition epitaxy of CoSi2 nanostructures on Si(001): Nucleation and growth and evolution of dots during anneal
af: Goldfarb, I, et al.
Udgivet: (1999)

In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001)
af: Goldfarb, I, et al.
Udgivet: (1998)

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
af: Jian-Huan Wang, et al.
Udgivet: (2021-03-01)

Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
af: Wedler, G, et al.
Udgivet: (1998)

Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
af: Liao, X, et al.
Udgivet: (2001)

Finite element analysis of CoSi2 nanocrystals on Si(001)
af: Goldfarb, I, et al.
Udgivet: (2002)

Hydrogen diffusion on Si(001)
af: Owen, J, et al.
Udgivet: (1996)

First principles study of GeSi exchange mechanisms at the Si(001) surface
af: Zipoli, F, et al.
Udgivet: (2008)

Diffusion of paired hydrogen on Si(001)
af: Bowler, DR, et al.
Udgivet: (1998)

Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
af: Zou, J, et al.
Udgivet: (2002)

Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
af: Liao, X, et al.
Udgivet: (2002)

Stress and relief of misfit strain of Ge/Si(001)
af: Wedler, G, et al.
Udgivet: (1998)

Nonuniform alloying in Ge(Si)/Si(001) quantum dots
af: Lang, C, et al.
Udgivet: (2003)

Annealing effects on the microstructure of Ge/Si(001) quantum dots
af: Liao, X, et al.
Udgivet: (2001)

Atomically perfect bismuth lines on Si(001)
af: Miki, K, et al.
Udgivet: (1999)

Bismuth-induced structures on Si(001) surfaces
af: Miki, K, et al.
Udgivet: (1999)

Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
af: Aleksei V. Kolesnikov, et al.
Udgivet: (2015-03-01)

Ordered GeSi nanorings grown on patterned Si (001) substrates
af: Ma Yingjie, et al.
Udgivet: (2011-01-01)

Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
af: Bergamaschini R, et al.
Udgivet: (2010-01-01)

Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor
af: Ewa Dumiszewska, et al.
Udgivet: (2022-06-01)

Alloyed Ge(Si)/Si(001) islands: The composition profile and the shape transformation
af: Lang, C, et al.
Udgivet: (2005)

The non-uniform composition profile in Ge(Si)/Si(001) quantum dots
af: Lang, C, et al.
Udgivet: (2004)

Band-offset determination and excitons in SiGe/Si(001) quantum wells
af: Cheng, H, et al.
Udgivet: (2000)

Strain relaxation by alloying effects in Ge islands grown on Si(001)
af: Liao, X, et al.
Udgivet: (1999)

An experimental-theoretical study of the behaviour of hydrogen on the Si(001) surface
af: Bowler, DR, et al.
Udgivet: (2000)

Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures
af: Walz, J, et al.
Udgivet: (1999)

Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition
af: Max Franck, et al.
Udgivet: (2022-09-01)

Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD
af: Yong Du, et al.
Udgivet: (2021-04-01)

Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si
af: Max Franck, et al.
Udgivet: (2025-01-01)

Enhancing the Coherent Phonon Transport in SiGe Nanowires with Dense Si/Ge Interfaces
af: Yajuan Cheng, et al.
Udgivet: (2022-12-01)

Hydrocarbon adsorption on Si(001): When does the Si dimer bond break?
af: Fisher, A, et al.
Udgivet: (1997)