Competing growth mechanisms of Ge/Si(001) coherent clusters

Competing growth mechanisms of Ge/Si(001) coherent clusters

Bibliografiska uppgifter
Huvudupphovsmän:	Goldfarb, I, Hayden, P, Owen, J, Briggs, G
Materialtyp:	Journal article
Publicerad:	1997

Liknande verk

Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
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Using growth kinetics for nanoengineering of Si-Ge surfaces
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Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
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Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
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Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
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Finite element analysis of CoSi2 nanocrystals on Si(001)
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Hydrogen diffusion on Si(001)
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First principles study of GeSi exchange mechanisms at the Si(001) surface
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Diffusion of paired hydrogen on Si(001)
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Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
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Stress and relief of misfit strain of Ge/Si(001)
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Nonuniform alloying in Ge(Si)/Si(001) quantum dots
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Annealing effects on the microstructure of Ge/Si(001) quantum dots
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Atomically perfect bismuth lines on Si(001)
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Bismuth-induced structures on Si(001) surfaces
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Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
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Ordered GeSi nanorings grown on patterned Si (001) substrates
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Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
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Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor
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Alloyed Ge(Si)/Si(001) islands: The composition profile and the shape transformation
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The non-uniform composition profile in Ge(Si)/Si(001) quantum dots
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Band-offset determination and excitons in SiGe/Si(001) quantum wells
av: Cheng, H, et al.
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Strain relaxation by alloying effects in Ge islands grown on Si(001)
av: Liao, X, et al.
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An experimental-theoretical study of the behaviour of hydrogen on the Si(001) surface
av: Bowler, DR, et al.
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Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures
av: Walz, J, et al.
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Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition
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Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD
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Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si
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Enhancing the Coherent Phonon Transport in SiGe Nanowires with Dense Si/Ge Interfaces
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Hydrocarbon adsorption on Si(001): When does the Si dimer bond break?
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