Edge effects in an insulating state of an electron-hole system in magnetic field
We find that an InAs/GaSb based electron-hole system exhibits insulating behaviour when the numbers of occupied electron and hole Landau levels are equal. In this insulating state, the Hall resistance becomes symmetric under field reversal, and both the Hall and longitudinal resistances display repr...
| Những tác giả chính: | , , , , , |
|---|---|
| Định dạng: | Conference item |
| Được phát hành: |
2001
|