Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate

Registos relacionados

• InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
  Por: Tyan, S, et al.
  Publicado em: (2001)
• Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
  Por: Leon, R, et al.
  Publicado em: (1996)
• Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
  Por: Arka B. Dey, et al.
  Publicado em: (2018-05-01)
• Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
  Por: Leon, R, et al.
  Publicado em: (2000)
• Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots
  Por: Qing Yuan, et al.
  Publicado em: (2018-11-01)