Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate
Auteurs principaux: | Tyan, S, Shields, P, Nicholas, R, Tsai, F, Lee, C |
---|---|
Format: | Journal article |
Publié: |
2000
|
Documents similaires
-
InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
par: Tyan, S, et autres
Publié: (2001) -
Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
par: Leon, R, et autres
Publié: (1996) -
Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
par: Arka B. Dey, et autres
Publié: (2018-05-01) -
Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
par: Leon, R, et autres
Publié: (2000) -
Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots
par: Qing Yuan, et autres
Publié: (2018-11-01)