CHEMICAL VAPOR-DEPOSITION ON SILICON - INSITU SURFACE STUDIES

Bibliographic Details
Main Authors: Foord, J, Jackman, R
Format: Journal article
Published: 1984
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author Foord, J
Jackman, R
author_facet Foord, J
Jackman, R
author_sort Foord, J
collection OXFORD
description
first_indexed 2024-03-07T02:48:57Z
format Journal article
id oxford-uuid:ad01ee3c-471c-4065-9910-eaadaf1b1e19
institution University of Oxford
last_indexed 2024-03-07T02:48:57Z
publishDate 1984
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spelling oxford-uuid:ad01ee3c-471c-4065-9910-eaadaf1b1e192022-03-27T03:32:40ZCHEMICAL VAPOR-DEPOSITION ON SILICON - INSITU SURFACE STUDIESJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:ad01ee3c-471c-4065-9910-eaadaf1b1e19Symplectic Elements at Oxford1984Foord, JJackman, R
spellingShingle Foord, J
Jackman, R
CHEMICAL VAPOR-DEPOSITION ON SILICON - INSITU SURFACE STUDIES
title CHEMICAL VAPOR-DEPOSITION ON SILICON - INSITU SURFACE STUDIES
title_full CHEMICAL VAPOR-DEPOSITION ON SILICON - INSITU SURFACE STUDIES
title_fullStr CHEMICAL VAPOR-DEPOSITION ON SILICON - INSITU SURFACE STUDIES
title_full_unstemmed CHEMICAL VAPOR-DEPOSITION ON SILICON - INSITU SURFACE STUDIES
title_short CHEMICAL VAPOR-DEPOSITION ON SILICON - INSITU SURFACE STUDIES
title_sort chemical vapor deposition on silicon insitu surface studies
work_keys_str_mv AT foordj chemicalvapordepositiononsiliconinsitusurfacestudies
AT jackmanr chemicalvapordepositiononsiliconinsitusurfacestudies