Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
The misfit dislocations in [001] Ge(Si)/Si islands grown at 700°C were investigated using transmission electron microscopy. 30° partial misfit dislocations are found both in the island/substrate interface and near the island surface. Since the 30° partial leads the movement of the 60° dissociated mi...
| Autori principali: | , , , |
|---|---|
| Natura: | Journal article |
| Lingua: | English |
| Pubblicazione: |
2002
|