SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY
Κύριοι συγγραφείς: | Foord, J, Singh, N, Wee, A, French, C, Fitzgerald, E |
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Μορφή: | Conference item |
Έκδοση: |
1991
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Παρόμοια τεκμήρια
Παρόμοια τεκμήρια
-
REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
ανά: Foord, J, κ.ά.
Έκδοση: (1993) -
SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
ανά: Davies, G, κ.ά.
Έκδοση: (1993) -
SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
ανά: Davies, G, κ.ά.
Έκδοση: (1991) -
REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
ανά: Foord, J, κ.ά.
Έκδοση: (1993) -
SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
ανά: Davies, G, κ.ά.
Έκδοση: (1994)