SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY
Egile Nagusiak: | Foord, J, Singh, N, Wee, A, French, C, Fitzgerald, E |
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Formatua: | Conference item |
Argitaratua: |
1991
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Antzeko izenburuak
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REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
nork: Foord, J, et al.
Argitaratua: (1993) -
SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
nork: Davies, G, et al.
Argitaratua: (1993) -
SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
nork: Davies, G, et al.
Argitaratua: (1991) -
REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
nork: Foord, J, et al.
Argitaratua: (1993) -
SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
nork: Davies, G, et al.
Argitaratua: (1994)