SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY
Päätekijät: | Foord, J, Singh, N, Wee, A, French, C, Fitzgerald, E |
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Aineistotyyppi: | Conference item |
Julkaistu: |
1991
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Samankaltaisia teoksia
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REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
Tekijä: Foord, J, et al.
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SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
Tekijä: Davies, G, et al.
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SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
Tekijä: Davies, G, et al.
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REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
Tekijä: Foord, J, et al.
Julkaistu: (1993) -
SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
Tekijä: Davies, G, et al.
Julkaistu: (1994)