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SURFACE-REACTION MECHANISMS IN...
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SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY
Manylion Llyfryddiaeth
Prif Awduron:
Foord, J
,
Singh, N
,
Wee, A
,
French, C
,
Fitzgerald, E
Fformat:
Conference item
Cyhoeddwyd:
1991
Daliadau
Disgrifiad
Eitemau Tebyg
Dangos Staff
Eitemau Tebyg
REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
gan: Foord, J, et al.
Cyhoeddwyd: (1993)
SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
gan: Davies, G, et al.
Cyhoeddwyd: (1993)
SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
gan: Davies, G, et al.
Cyhoeddwyd: (1991)
REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
gan: Foord, J, et al.
Cyhoeddwyd: (1993)
SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
gan: Davies, G, et al.
Cyhoeddwyd: (1994)