{111} defects in 1-MeV-silicon-ion-implanted silicon.

Gelijkaardige items

• {111} and {311} rod-like defects in silicon ion implanted silicon
  door: Chou, C, et al.
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• Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon
  door: Wong-Leung, J, et al.
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• Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements
  door: J. Szivos, et al.
  Gepubliceerd in: (2022-01-01)
• Path integrals from meV to MeV /
  door: Bielefeld Encounters in Physics and Mathematics (7th : 1985 : Bielefeld Center for Interdisciplinary Research), et al.
  Gepubliceerd in: (1986)
• The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
  door: Glasko, J, et al.
  Gepubliceerd in: (1997)