{111} defects in 1-MeV-silicon-ion-implanted silicon.

Bibliographic Details
Main Authors: Chou, C, Cockayne, D, Zou, J, Kringhoj, P, Jagadish, C
Format: Journal article
Language:English
Published: 1995
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author Chou, C
Cockayne, D
Zou, J
Kringhoj, P
Jagadish, C
author_facet Chou, C
Cockayne, D
Zou, J
Kringhoj, P
Jagadish, C
author_sort Chou, C
collection OXFORD
description
first_indexed 2024-03-07T02:55:53Z
format Journal article
id oxford-uuid:af495c15-a2d4-4c1f-8430-00487914898a
institution University of Oxford
language English
last_indexed 2024-03-07T02:55:53Z
publishDate 1995
record_format dspace
spelling oxford-uuid:af495c15-a2d4-4c1f-8430-00487914898a2022-03-27T03:48:23Z{111} defects in 1-MeV-silicon-ion-implanted silicon.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:af495c15-a2d4-4c1f-8430-00487914898aEnglishSymplectic Elements at Oxford1995Chou, CCockayne, DZou, JKringhoj, PJagadish, C
spellingShingle Chou, C
Cockayne, D
Zou, J
Kringhoj, P
Jagadish, C
{111} defects in 1-MeV-silicon-ion-implanted silicon.
title {111} defects in 1-MeV-silicon-ion-implanted silicon.
title_full {111} defects in 1-MeV-silicon-ion-implanted silicon.
title_fullStr {111} defects in 1-MeV-silicon-ion-implanted silicon.
title_full_unstemmed {111} defects in 1-MeV-silicon-ion-implanted silicon.
title_short {111} defects in 1-MeV-silicon-ion-implanted silicon.
title_sort 111 defects in 1 mev silicon ion implanted silicon
work_keys_str_mv AT chouc 111defectsin1mevsiliconionimplantedsilicon
AT cockayned 111defectsin1mevsiliconionimplantedsilicon
AT zouj 111defectsin1mevsiliconionimplantedsilicon
AT kringhojp 111defectsin1mevsiliconionimplantedsilicon
AT jagadishc 111defectsin1mevsiliconionimplantedsilicon