{111} defects in 1-MeV-silicon-ion-implanted silicon.
Main Authors: | , , , , |
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Format: | Journal article |
Language: | English |
Published: |
1995
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_version_ | 1797088842310746112 |
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author | Chou, C Cockayne, D Zou, J Kringhoj, P Jagadish, C |
author_facet | Chou, C Cockayne, D Zou, J Kringhoj, P Jagadish, C |
author_sort | Chou, C |
collection | OXFORD |
description | |
first_indexed | 2024-03-07T02:55:53Z |
format | Journal article |
id | oxford-uuid:af495c15-a2d4-4c1f-8430-00487914898a |
institution | University of Oxford |
language | English |
last_indexed | 2024-03-07T02:55:53Z |
publishDate | 1995 |
record_format | dspace |
spelling | oxford-uuid:af495c15-a2d4-4c1f-8430-00487914898a2022-03-27T03:48:23Z{111} defects in 1-MeV-silicon-ion-implanted silicon.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:af495c15-a2d4-4c1f-8430-00487914898aEnglishSymplectic Elements at Oxford1995Chou, CCockayne, DZou, JKringhoj, PJagadish, C |
spellingShingle | Chou, C Cockayne, D Zou, J Kringhoj, P Jagadish, C {111} defects in 1-MeV-silicon-ion-implanted silicon. |
title | {111} defects in 1-MeV-silicon-ion-implanted silicon. |
title_full | {111} defects in 1-MeV-silicon-ion-implanted silicon. |
title_fullStr | {111} defects in 1-MeV-silicon-ion-implanted silicon. |
title_full_unstemmed | {111} defects in 1-MeV-silicon-ion-implanted silicon. |
title_short | {111} defects in 1-MeV-silicon-ion-implanted silicon. |
title_sort | 111 defects in 1 mev silicon ion implanted silicon |
work_keys_str_mv | AT chouc 111defectsin1mevsiliconionimplantedsilicon AT cockayned 111defectsin1mevsiliconionimplantedsilicon AT zouj 111defectsin1mevsiliconionimplantedsilicon AT kringhojp 111defectsin1mevsiliconionimplantedsilicon AT jagadishc 111defectsin1mevsiliconionimplantedsilicon |