{111} defects in 1-MeV-silicon-ion-implanted silicon.

{111} defects in 1-MeV-silicon-ion-implanted silicon.

Bibliographic Details
Main Authors:	Chou, C, Cockayne, D, Zou, J, Kringhoj, P, Jagadish, C
Format:	Journal article
Language:	English
Published:	1995

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