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Transmission electron microsco...
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Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon
Bibliographic Details
Main Authors:
Wong-Leung, J
,
Fatima, S
,
Jagadish, C
,
Gerald, F
,
Chou, C
,
Zou, J
,
Cockayne, D
Format:
Journal article
Published:
2000
Holdings
Description
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