APA (7th ed.) Citation

Wong-Leung, J., Fatima, S., Jagadish, C., Gerald, F., Chou, C., Zou, J., & Cockayne, D. (2000). Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon.

Chicago Style (17th ed.) Citation

Wong-Leung, J., S. Fatima, C. Jagadish, F. Gerald, C. Chou, J. Zou, and D. Cockayne. Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon. 2000.

MLA (9th ed.) Citation

Wong-Leung, J., et al. Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon. 2000.