APA-ийн эшлэл(7 дахь хэвлэлт)

Wong-Leung, J., Fatima, S., Jagadish, C., Gerald, F., Chou, C., Zou, J., & Cockayne, D. (2000). Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon.

Чикаго-гийн эшлэл (17 дахь хэвлэлт)

Wong-Leung, J., S. Fatima, C. Jagadish, F. Gerald, C. Chou, J. Zou, ба D. Cockayne. Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon. 2000.

MLA -ийн эшлэл (9 дэх хэвлэлт)

Wong-Leung, J., et al. Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon. 2000.