Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Geahča maid

• {111} defects in 1-MeV-silicon-ion-implanted silicon.
  Dahkki: Chou, C, et al.
  Almmustuhtton: (1995)
• {111} and {311} rod-like defects in silicon ion implanted silicon
  Dahkki: Chou, C, et al.
  Almmustuhtton: (1996)
• Double-shot MeV electron diffraction and microscopy
  Dahkki: P. Musumeci, et al.
  Almmustuhtton: (2017-07-01)
• Path integrals from meV to MeV /
  Dahkki: Bielefeld Encounters in Physics and Mathematics (7th : 1985 : Bielefeld Center for Interdisciplinary Research), et al.
  Almmustuhtton: (1986)
• New experimental results for the 17 MeV particle created in 8Be
  Dahkki: Krasznahorkay A.J., et al.
  Almmustuhtton: (2017-01-01)