Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon
| Main Authors: | , , , , , , |
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| Format: | Journal article |
| Published: |
2000
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| _version_ | 1797088899838771200 |
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| author | Wong-Leung, J Fatima, S Jagadish, C Gerald, F Chou, C Zou, J Cockayne, D |
| author_facet | Wong-Leung, J Fatima, S Jagadish, C Gerald, F Chou, C Zou, J Cockayne, D |
| author_sort | Wong-Leung, J |
| collection | OXFORD |
| description | |
| first_indexed | 2024-03-07T02:56:45Z |
| format | Journal article |
| id | oxford-uuid:af8e4702-477c-4a85-a7cf-d3a530db32f2 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T02:56:45Z |
| publishDate | 2000 |
| record_format | dspace |
| spelling | oxford-uuid:af8e4702-477c-4a85-a7cf-d3a530db32f22022-03-27T03:50:19ZTransmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in siliconJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:af8e4702-477c-4a85-a7cf-d3a530db32f2Symplectic Elements at Oxford2000Wong-Leung, JFatima, SJagadish, CGerald, FChou, CZou, JCockayne, D |
| spellingShingle | Wong-Leung, J Fatima, S Jagadish, C Gerald, F Chou, C Zou, J Cockayne, D Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon |
| title | Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon |
| title_full | Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon |
| title_fullStr | Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon |
| title_full_unstemmed | Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon |
| title_short | Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon |
| title_sort | transmission electron microscopy characterization of secondary defects created by mev si ge and sn implantation in silicon |
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