Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Detalles Bibliográficos
Autores principales:	Wong-Leung, J, Fatima, S, Jagadish, C, Gerald, F, Chou, C, Zou, J, Cockayne, D
Formato:	Journal article
Publicado:	2000

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