Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Detalhes bibliográficos
Main Authors:	Wong-Leung, J, Fatima, S, Jagadish, C, Gerald, F, Chou, C, Zou, J, Cockayne, D
Formato:	Journal article
Publicado em:	2000

Registos relacionados