Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Bibliografske podrobnosti
Main Authors:	Wong-Leung, J, Fatima, S, Jagadish, C, Gerald, F, Chou, C, Zou, J, Cockayne, D
Format:	Journal article
Izdano:	2000

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