Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Bibliografische gegevens
Hoofdauteurs:	Wong-Leung, J, Fatima, S, Jagadish, C, Gerald, F, Chou, C, Zou, J, Cockayne, D
Formaat:	Journal article
Gepubliceerd in:	2000

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