Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

מידע ביבליוגרפי
Main Authors: Wong-Leung, J, Fatima, S, Jagadish, C, Gerald, F, Chou, C, Zou, J, Cockayne, D
פורמט: Journal article
יצא לאור: 2000

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