Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Slični predmeti

• {111} defects in 1-MeV-silicon-ion-implanted silicon.
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• Path integrals from meV to MeV /
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• {111} and {311} rod-like defects in silicon ion implanted silicon
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• Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature
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• The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
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