Boron-Oxygen Defect Formation Rates and Activity at Elevated Temperatures
In this work the dependence of the slow boron-oxygen defect formation rate on excess carrier density is examined in p-type Cz silicon. In order to examine behavior at elevated temperatures simple models are developed to simulate the injection-level dependent lifetime of samples at a range of tempera...
| Main Authors: | , , , , , , , , |
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| Format: | Journal article |
| Published: |
Elsevier
2016
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