Proton-induced fixed positive charge at the Si(100)-SiO2 interface.
Positively charged defects induced by protons at the Si(100)-SiO2 interface are studied through density-functional calculations and realistic interface models. Protons generally preserve the bonding network, but cause the spontaneous breaking of strained bonds leading to threefold-coordinated Si(3)(...
| المؤلفون الرئيسيون: | , , |
|---|---|
| التنسيق: | Journal article |
| اللغة: | English |
| منشور في: |
2007
|