Proton-induced fixed positive charge at the Si(100)-SiO2 interface.
Positively charged defects induced by protons at the Si(100)-SiO2 interface are studied through density-functional calculations and realistic interface models. Protons generally preserve the bonding network, but cause the spontaneous breaking of strained bonds leading to threefold-coordinated Si(3)(...
| Հիմնական հեղինակներ: | , , |
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| Ձևաչափ: | Journal article |
| Լեզու: | English |
| Հրապարակվել է: |
2007
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