Proton-induced fixed positive charge at the Si(100)-SiO2 interface.

Proton-induced fixed positive charge at the Si(100)-SiO2 interface.

Positively charged defects induced by protons at the Si(100)-SiO2 interface are studied through density-functional calculations and realistic interface models. Protons generally preserve the bonding network, but cause the spontaneous breaking of strained bonds leading to threefold-coordinated Si(3)(...

Полное описание

Библиографические подробности
Главные авторы:	Godet, J, Giustino, F, Pasquarello, A
Формат:	Journal article
Язык:	English
Опубликовано:	2007

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