Electron-beam-induced current study of dislocations in GaAs
Well-characterized α, β and screw dislocations have been created in GaAs specimens. dislocation segments which thread the semiconductor surface at a known angle have been studied in terms of their behavior as recombination centres and an analysis of the minority carrier diffusion length LD, has been...
| Main Authors: | , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
Elsevier
1994
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