A wide dynamic range CMOS image sensor with the optimum photoresponse per pixel
A 100x100 CMOS image sensor (CIS) occupying an area of 2.25 mm2 fabricated in a standard 0.35-m CMOS technology is described. A back to back pixel layout with pixel dimension of 10m10m and a fill factor of 41% is achieved. The pixels in the CIS integrate the photocurrent for time that depends upon t...
| Principais autores: | , , , |
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| Formato: | Journal article |
| Idioma: | English |
| Publicado em: |
2011
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