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Ion-implantation-induced exten...
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Ion-implantation-induced extended defect formation in (0001) and (11(2)over-bar0) 4H-SiC
Bibliographic Details
Main Authors:
Wong-Leung, J
,
Linnarsson, M
,
Svensson, BG
,
Cockayne, D
Format:
Journal article
Published:
2005
Holdings
Description
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