Ion-implantation-induced extended defect formation in (0001) and (11(2)over-bar0) 4H-SiC

Ion-implantation-induced extended defect formation in (0001) and (11(2)over-bar0) 4H-SiC

Bibliographic Details
Main Authors:	Wong-Leung, J, Linnarsson, M, Svensson, BG, Cockayne, D
Format:	Journal article
Published:	2005

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