Spin polarized electronic reflections at metal-oxide interfaces: A technique for characterizing tunneling barriers in magnetic random access memory devices
One of the most critical steps in the realization of high quality tunneling devices is the fabrication of ultrathin oxide layers. This article describes a powerful technique for controlling the oxidation of ultrathin metallic layers. The technique consists of depositing the metallic layer to be oxid...
| Main Authors: | , , , , , , , , |
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| Format: | Conference item |
| Published: |
2002
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