Stranski-Krastanov growth of InN nanostructures on GaN studied by RHEED, STM and AFM
The growth of self-assembled InN nanostructures on GaN by MBE has been studied using two different nitrogen sources. Stranski-Krastanov growth may be achieved but is highly sensitive to the V: III ratio as well as coverage and temperature. The size and shape of the resultant nanostructures depend on...
| Main Authors: | , , , , , |
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| Format: | Conference item |
| Published: |
2002
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