Time-resolved and time-integrated photoluminescence studies of coupled asymmetric GaN quantum discs embedded in AlGaN barriers

Time-resolved and time-integrated photoluminescence studies of coupled asymmetric GaN quantum discs embedded in AlGaN barriers

Bibliographic Details
Main Authors:	Na, J, Taylor, R, Rice, J, Robinson, J, Lee, K, Park, Y, Park, C, Kang, T
Format:	Journal article
Published:	2005

Similar Items

Two-photon excitation of asymmetric GaN/AlGaN quantum discs
by: Lee, K, et al.
Published: (2007)

Magneto-photoluminescence of AlGaN/GaN quantum wells
by: Shields, P, et al.
Published: (2001)

Two-photon excitation spectroscopy of coupled asymmetric GaN/AlGaN quantum discs
by: Lee, K, et al.
Published: (2006)

Photoluminescence properties of a single GaN nanorod with GaN/AlGaN multilayer quantum disks
by: Yi, SN, et al.
Published: (2007)

Control of yellow photoluminescence in AlGaN/GaN heterostructures
by: Nadezhda B. Gladysheva, et al.
Published: (2019-06-01)

Characterization of tunneling and free-carrier screening in coupled asymmetric GaN/AlGaN quantum discs
by: Lee, K, et al.
Published: (2007)

Enhancement of free-carrier screening due to tunneling in coupled asymmetric GaN/AlGaN quantum discs
by: Lee, K, et al.
Published: (2006)

Micro- and Time-resolved Photoluminescence in GaN Nanorods with Different Diameters
by: Park, Y, et al.
Published: (2010)

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
by: Tzu-Hsuan Chang, et al.
Published: (2017-07-01)

Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
by: Anthonin Delphan, et al.
Published: (2023-02-01)

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
by: Park, Y, et al.
Published: (2018)

Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers
by: Park, Y, et al.
Published: (2011)

Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas
by: A. D. Yunik, et al.
Published: (2022-12-01)

Graphene/AlGaN/GaN RF Switch
by: Yevhen Yashchyshyn, et al.
Published: (2021-10-01)

Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT
by: Hideyuki Itakura, et al.
Published: (2020-02-01)

An SEB Hardened AlGaN/GaN HEMT With Barrier Interlayer
by: Fei Zhang, et al.
Published: (2020-01-01)

Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots
by: Robinson, J, et al.
Published: (2004)

Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs
by: Zuorong Nie, et al.
Published: (2024-04-01)

Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs
by: Ki-Sik Im, et al.
Published: (2020-09-01)

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
by: Ju, Zhen Gang, et al.
Published: (2016)

Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure
by: Honghui Liu, et al.
Published: (2022-11-01)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
by: Hanghang Lv, et al.
Published: (2023-07-01)

Wet-based digital etching on GaN and AlGaN
by: Shih, Pao-Chuan, et al.
Published: (2022)

AlGaN/GaN-based power semiconductor switches
by: Lu, Bin, Ph. D. Massachusetts Institute of Technology
Published: (2013)

AlGaN/GaN HEMT With 300-GHz fmax
by: Chung, Jinwook, et al.
Published: (2013)

Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs
by: An-Chen Liu, et al.
Published: (2025-01-01)

Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier
by: Palacios, Tomas, et al.
Published: (2012)

MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
by: Haruka Matsuura, et al.
Published: (2019-04-01)

A time to failure evaluation of AlGaN/GaN HEMT transistors for RF applications
by: Olivier Latry, et al.
Published: (2022-01-01)

Thermal Field Analysis for New AlGaN/GaN HEMT With Partial Etched AlGaN Layer
by: Baoxing Duan, et al.
Published: (2020-01-01)

AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer
by: Honghui Liu, et al.
Published: (2022-01-01)

AlGaN/GaN Schottky Barrier Diodes on Free-Standing GaN Substrates With a Si Doped Barrier Layer
by: Taofei Pu, et al.
Published: (2022-01-01)

High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
by: Gwen Rolland, et al.
Published: (2021-09-01)

Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT
by: Yusnizam Yusuf, et al.
Published: (2023-01-01)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
by: Maodan Ma, et al.
Published: (2022-12-01)

Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation
by: Monisha Ghosh, et al.
Published: (2024-05-01)

Investigation of AlGaN/GaN HFET and VO<sub>2</sub> Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers
by: Ferhat Bayram, et al.
Published: (2020-09-01)

Free carrier screening in coupled asymmetric GaN quantum discs
by: Lee, K, et al.
Published: (2006)

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs
by: Danqiong Hou, et al.
Published: (2012-01-01)

Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate
by: Lu, Bin, et al.
Published: (2012)